Invention Grant
- Patent Title: Semiconductor heterostructures with wurtzite-type structure on ZnO substrate
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Application No.: US16349586Application Date: 2017-11-15
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Publication No.: US11217663B2Publication Date: 2022-01-04
- Inventor: Julien Brault , Mohamed Al Khalfioui , Benjamin Damilano , Jean-Michel Chauveau
- Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- Applicant Address: FR Paris
- Assignee: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- Current Assignee: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- Current Assignee Address: FR Paris
- Agency: BakerHostetler
- Priority: FR1661191 20161118
- International Application: PCT/EP2017/079275 WO 20171115
- International Announcement: WO2018/091502 WO 20180524
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L21/02 ; H01L29/20 ; H01L29/22 ; H01L29/267 ; H01L33/16 ; H01L33/00 ; H01L33/32
Abstract:
A process for fabricating a heterostructure made of semiconductor materials having a crystalline structure of wurtzite type, includes the following steps: structuring a surface of a zinc oxide monocrystalline substrate into mesas; depositing by epitaxy at least one layer of semiconductor materials having a crystalline structure of wurtzite type, forming the heterostructure, on top of the structured surface. Heterostructure obtained by such a process. A process for fabricating at least one electronic or optoelectronic device from such a heterostructure is also provided.
Public/Granted literature
- US20190280085A1 SEMICONDUCTOR HETEROSTRUCTURES WITH WURTZITE-TYPE STRUCTURE ON ZnO SUBSTRATE Public/Granted day:2019-09-12
Information query
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