Invention Grant
- Patent Title: Method of forming a source/drain
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Application No.: US16677798Application Date: 2019-11-08
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Publication No.: US11217672B2Publication Date: 2022-01-04
- Inventor: Chien-Wei Lee , Hsueh-Chang Sung , Yen-Ru Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01J9/14 ; H01L29/66 ; H01L21/324 ; C30B25/16 ; H01L21/02 ; H01L21/20 ; C30B25/10 ; C30B25/12
Abstract:
Embodiments provide a way of treating source/drain recesses with a high heat treatment and an optional hydrogen plasma treatment. The high heat treatment smooths the surfaces inside the recesses and remove oxides and etching byproducts. The hydrogen plasma treatment enlarges the recesses vertically and horizontally and inhibits further oxidation of the surfaces in the recesses.
Public/Granted literature
- US20210066465A1 Method of Forming a Source/Drain Public/Granted day:2021-03-04
Information query
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