A method of forming a semiconductor structure includes forming a fin over a substrate, forming a bottom source/drain over the substrate surrounding a first portion of sidewalls of the fin, and forming a bottom spacer over the bottom source/drain and surrounding a second portion of the sidewalls of the fin. The method also includes forming a T-shaped gate stack over the bottom spacer and surrounding a third portion of the sidewalls of the fin, forming a top spacer over the T-shaped gate stack and surrounding a fourth portion of the sidewalls of the fin, and forming a top source/drain over the top spacer and surrounding a fifth portion of the sidewalls and a top surface of the fin. The T-shaped gate stack includes a gate dielectric, a gate conductor, and a gate metal extending outward from a portion of sidewalls of the gate conductor between the bottom and top spacers.