Invention Grant
- Patent Title: Heterojunction bipolar transistor with marker layer
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Application No.: US16909376Application Date: 2020-06-23
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Publication No.: US11217685B2Publication Date: 2022-01-04
- Inventor: Herbert Ho , Vibhor Jain , John J. Pekarik , Claude Ortolland , Judson R. Holt , Qizhi Liu , Viorel Ontalus
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Roberts Calderon Safran & Cole, P.C.
- Agent Francois Pagette; Andrew M. Calderon
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/66 ; H01L29/08
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to a device with a marker layer and methods of manufacture. The device includes: a collector region; an intrinsic base region above the collector region; an emitter region comprising emitter material and a marker layer vertically between the intrinsic base region and the emitter material; and an extrinsic base region in electrical contact with the intrinsic base region.
Public/Granted literature
- US20210091214A1 HETEROJUNCTION BIPOLAR TRANSISTOR WITH MARKER LAYER Public/Granted day:2021-03-25
Information query
IPC分类:
