Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US16808584Application Date: 2020-03-04
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Publication No.: US11217688B2Publication Date: 2022-01-04
- Inventor: Hidenobu Kojima
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Minato-ku; JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Minato-ku; JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2019-163009 20190906
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/78 ; H01L21/288 ; H01L21/78

Abstract:
A semiconductor device includes a semiconductor part, a metal layer, first and second electrodes, and first and second control electrodes. The first and second electrodes are provided on a front surface of the semiconductor part and arranged along the front surface of the semiconductor part. The first control electrode is provided between the semiconductor part and the first electrode. The second control electrode is provided between the semiconductor part and the second electrode. The metal layer covers a back-surface of the semiconductor part. The metal layer includes a first layer and a second layer. The first layer of the metal layer is electrically connected to the semiconductor part. The second layer of the metal layer is provided on the first layer inside a periphery of the first layer. The second layer has a layer thickness thicker than a layer thickness of the first layer.
Public/Granted literature
- US20210074844A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2021-03-11
Information query
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