Invention Grant
- Patent Title: Method of forming a semiconductor device and structure therefor
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Application No.: US16545622Application Date: 2019-08-20
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Publication No.: US11217689B2Publication Date: 2022-01-04
- Inventor: Dean E. Probst , Peter A. Burke , Prasad Venkatraman
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/66 ; H01L29/739 ; H01L21/765 ; H01L29/423
Abstract:
In one embodiment, a semiconductor device is formed having a plurality of active trenches formed within an active region of the semiconductor device. A first insulator is formed along at least a portion of sidewalls of each active trench. A perimeter termination trench is formed that surrounds the active region. The perimeter termination trench is formed having a first sidewall that is adjacent the active region and a second sidewall that is opposite the first sidewall. An insulator is formed along the second sidewall that has a thickness is greater than an insulator that is formed along the first sidewall.
Information query
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