Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
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Application No.: US16905120Application Date: 2020-06-18
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Publication No.: US11217703B2Publication Date: 2022-01-04
- Inventor: Satoshi Toriumi , Takashi Hamada , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Ryunosuke Honda , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP2015-081993 20150413,JP2015-082008 20150413
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/24 ; H01L29/51 ; H01L29/49 ; H01L29/417 ; H01L27/12 ; H01L27/146 ; H01L27/1156 ; H01L27/06 ; H01L29/423 ; H01L21/822
Abstract:
A minute transistor is provided that includes a first insulator, a second insulator, a first, conductor, a second conductor, and third conductor, in which an angle is formed between a side surface of the first insulator and a top surface of the first conductor, and a length between the first conductor and a surface of the second conductor closest to the first conductor is at least greater than a length between the first conductor and the third conductor.
Information query
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