Invention Grant
- Patent Title: Graphene-semiconductor heterojunction photodetector and method of manufacturing the same
-
Application No.: US16864077Application Date: 2020-04-30
-
Publication No.: US11217709B2Publication Date: 2022-01-04
- Inventor: Byoung Hun Lee , Kyoung Eun Chang
- Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Gwangju
- Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Gwangju
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2019-0052549 20190503,KR10-2019-0052555 20190503
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L31/0224 ; H01L31/18 ; H01L31/113 ; H01L31/028

Abstract:
In a graphene-semiconductor heterojunction photodetector and a method of manufacturing the same according to the present inventive concept, a source electrode and a test electrode are formed to face each other on a graphene layer, and a drain electrode is formed in a direction perpendicular to a central region portion of the graphene layer, so that the drain electrode may be physically separated from the graphene layer. Further, charges formed at the central region portion of the graphene layer are transmitted to the drain electrode through a substrate, so that high photosensitivity may be secured, and a high output voltage may be secured for the applied light. Accordingly, the drain electrode is formed at a side surface of the graphene layer, so that the size of the drain electrode may be easily controlled, and a high output voltage may be obtained.
Public/Granted literature
- US20200350443A1 GRAPHENE-SEMICONDUCTOR HETEROJUNCTION PHOTODETECTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-11-05
Information query
IPC分类: