Invention Grant
- Patent Title: Fault detector circuit
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Application No.: US16871132Application Date: 2020-05-11
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Publication No.: US11217965B2Publication Date: 2022-01-04
- Inventor: John Julius De Leon Asuncion , Tong-Tee Tan , Jiaqi Sun
- Applicant: LITE-ON SINGAPORE PTE. LTD.
- Applicant Address: SG Singapore
- Assignee: LITE-ON SINGAPORE PTE. LTD.
- Current Assignee: LITE-ON SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Li & Cai Intellectual Property (USA) Office
- Priority: CN201910521843.9 20190617
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01S5/068

Abstract:
A fault detector circuit is provided for detecting or controlling any signal related to a laser emitter in an electronic device. The fault detector circuit includes a first NMOS transistor and a comparator. A drain of the first NMOS transistor is coupled to a first supply voltage through the laser emitter. A gate of the first NMOS transistor is coupled to a control voltage. A source of the first NMOS transistor is grounded. The comparator is coupled to the drain of the first NMOS transistor and a reference voltage. The comparator compares a voltage of the drain of the first NMOS transistor with the reference voltage to generate a first detecting signal for determining whether or not the first supply voltage of the laser emitter needs to be cut off.
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