- Patent Title: Intelligent power module including semiconductor elements of a plurality of phases drive circuits of a plurality of phases and a plurality of temperature detection elements
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Application No.: US16594425Application Date: 2019-10-07
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Publication No.: US11217986B2Publication Date: 2022-01-04
- Inventor: Akiko Goto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2018-232211 20181212
- Main IPC: H02M1/32
- IPC: H02M1/32 ; H02H7/122 ; H02H7/08 ; H02H5/04 ; H02H7/20

Abstract:
An object of the present invention is to stop the driving of a semiconductor element swiftly at a time of abnormality while sharing an output terminal between temperature information and an error signal in an IPM. In the intelligent power module of the present invention, each drive circuit includes an output control circuit configured to select the error signal while the error signal generation circuit outputs the error signal, to select the temperature signal while the error signal generation circuit does not output the error signal, and to output a selected signal as an alarm signal. The temperature signal generation circuit is configured to change the voltage value of the temperature signal in accordance with the element temperature of the specific semiconductor element within a voltage range different from the voltage value of the error signal.
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