Invention Grant
- Patent Title: Semiconductor device with multiple independent gates
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Application No.: US16569572Application Date: 2019-09-12
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Publication No.: US11218144B2Publication Date: 2022-01-04
- Inventor: Sanjay Havanur , M. Ayman Shibib
- Applicant: Siliconix Incorporated
- Applicant Address: US CA San Jose
- Assignee: Siliconix Incorporated
- Current Assignee: Siliconix Incorporated
- Current Assignee Address: US CA San Jose
- Main IPC: H03K17/0812
- IPC: H03K17/0812 ; H03K17/567 ; H01L27/07 ; H01L29/423 ; H01L29/778 ; H01L29/866 ; H01L29/78 ; H01L29/20

Abstract:
Semiconductor device with multiple independent gates. A gate-controlled semiconductor device includes a first plurality of cells of the semiconductor device configured to be controlled by a primary gate, and a second plurality of cells of the semiconductor device configured to be controlled by an auxiliary gate. The primary gate is electrically isolated from the auxiliary gate, and sources and drains of the semiconductor device are electrically coupled in parallel. The first and second pluralities of cells may be substantially identical in structure.
Public/Granted literature
- US20210083660A1 SEMICONDUCTOR DEVICE WITH MULTIPLE INDEPENDENT GATES Public/Granted day:2021-03-18
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