Invention Grant
- Patent Title: Self-aligned gate cap including an etch-stop layer
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Application No.: US16020412Application Date: 2018-06-27
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Publication No.: US11222820B2Publication Date: 2022-01-11
- Inventor: Michael P. Belyansky , Marc Bergendahl , Victor W. C. Chan , Jeffrey C. Shearer
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Erik Johnson
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/768 ; H01L21/8238 ; H01L21/311 ; H01L21/027
Abstract:
According to embodiments of the present invention, a method of forming a self-aligned contact includes depositing an etch-stop liner on a surface of a gate cap and a contact region. A dielectric oxide layer is deposited onto the etch-stop layer. The dielectric oxide layer and the etch-stop liner are removed in a region above the contact region to form a removed region. A contact is deposited in the etched region.
Public/Granted literature
- US20200006137A1 SELF-ALIGNED GATE CAP INCLUDING AN ETCH-STOP LAYER Public/Granted day:2020-01-02
Information query
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