Invention Grant
- Patent Title: ESD protection device with low trigger voltage
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Application No.: US16669475Application Date: 2019-10-30
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Publication No.: US11222886B2Publication Date: 2022-01-11
- Inventor: Wen-Tsung Chang
- Applicant: Wen-Tsung Chang
- Applicant Address: TW Hsinchu
- Assignee: Wen-Tsung Chang
- Current Assignee: Wen-Tsung Chang
- Current Assignee Address: TW Hsinchu
- Agency: Penilla IP, APC
- Priority: TW108131780 20190904
- Main IPC: H01L27/02
- IPC: H01L27/02
Abstract:
The present invention provides an ESD protection device with the mechanism of punch through to achieve low trigger voltage. At the same time, the structure of ESD protection device includes parasitic NPN and parasitic PNP. Parasitic NPN and parasitic PNP will form a silicon controlled rectifier (SCR) device with snapback behavior to increase the protection capability of ESD protection device.
Public/Granted literature
- US20210066284A1 ESD PROTECTION DEVICE WITH LOW TRIGGER VOLTAGE Public/Granted day:2021-03-04
Information query
IPC分类:
