Invention Grant
- Patent Title: Transient voltage suppression device
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Application No.: US16910094Application Date: 2020-06-24
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Publication No.: US11222887B2Publication Date: 2022-01-11
- Inventor: Cheng-Chi Lin , Chih-Hao Chen
- Applicant: IPU SEMICONDUCTOR CO., LTD.
- Applicant Address: TW Miaoli County
- Assignee: IPU SEMICONDUCTOR CO., LTD.
- Current Assignee: IPU SEMICONDUCTOR CO., LTD.
- Current Assignee Address: TW Miaoli County
- Agency: Li & Cai Intellectual Property Office
- Priority: TW108125073 20190716
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/74

Abstract:
A transient voltage suppression device including a substrate of a first conductivity type, a first well of a second conductivity type, a first anode, a first cathode, and a first trigger node is provided. The first well is disposed in the substrate. The first anode is disposed in the substrate outside the first well and includes a second doped region of the second conductivity type and a third doped region of the first conductivity type disposed between the second doped region and the first doped region. The first trigger node is disposed between the first anode and the first cathode, and includes a fourth region of the first conductivity type disposed in the substrate and a fifth doped region of the second conductivity type at least partially disposed in the first well and disposed between the fourth doped region and the third doped region.
Public/Granted literature
- US20210020625A1 TRANSIENT VOLTAGE SUPPRESSION DEVICE Public/Granted day:2021-01-21
Information query
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