Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display device
-
Application No.: US16633637Application Date: 2019-01-07
-
Publication No.: US11222904B2Publication Date: 2022-01-11
- Inventor: Hongru Zhou , Zhonghao Huang , Xu Wu , Chao Zhang , Kai Wang
- Applicant: CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Chongqing; CN Beijing
- Assignee: CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Chongqing; CN Beijing
- Agency: Dilworth & Barrese, LLP
- Agent Michael J. Musella, Esq.
- International Application: PCT/CN2019/070702 WO 20190107
- International Announcement: WO2020/142881 WO 20200716
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/32 ; H01L29/06 ; H01L29/417 ; H01L29/423

Abstract:
A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The thin film transistor is provided on a base substrate and includes: an active layer including a first surface and a second surface which are opposite to each other, in which the second surface is closer to the base substrate than the first surface; and a source-drain electrode layer including a source electrode and a drain electrode which are separated from each other and are respectively connected with the active layer; each of the first surface and the second surface is a non-flat surface, and the non-flat surface includes a plurality of depressions and a plurality of protrusions which are alternately arranged.
Public/Granted literature
Information query
IPC分类: