Invention Grant
- Patent Title: Method of forming a semiconductor device and circuit
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Application No.: US16814129Application Date: 2020-03-10
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Publication No.: US11223338B2Publication Date: 2022-01-11
- Inventor: Martin Podzemny
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F3/45 ; H03F1/02

Abstract:
In one embodiment, an amplifier circuit may be configured with an output transistor that forms an output current and an output voltage at an output. The amplifier circuit may also include a reference circuit that may be configured to form a reference current that is substantially proportional to the output current. An embodiment of the reference circuit may also be configured to control a transistor to sink current from the output in response changes in the reference current.
Public/Granted literature
- US20210288622A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE AND CIRCUIT Public/Granted day:2021-09-16
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