Invention Grant
- Patent Title: EUV light source and apparatus for lithography
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Application No.: US16405530Application Date: 2019-05-07
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Publication No.: US11226564B2Publication Date: 2022-01-18
- Inventor: Jhan-Hong Yeh , Cheng-Chieh Chen , Jeng-Yann Tsay , Li-Jui Chen , Henry Yee Shian Tong , Wen-Chih Wang , Hsin-Liang Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H05G2/00

Abstract:
In a method of diagnosing an RF generator of a laser produced plasma extreme ultra violet (LPP EUV) radiation source apparatus, a testing system is connected to the RF generator of the LPP EUV radiation source apparatus. An output power is measured by the testing system with changing an input power of the RF generator. Using a computer system, the measured output power is analyzed. Based on the analyzed measured output power, whether the RF generator is operating properly is determined.
Public/Granted literature
- US20200004159A1 EUV LIGHT SOURCE AND APPARATUS FOR LITHOGRAPHY Public/Granted day:2020-01-02
Information query
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