Invention Grant
- Patent Title: Wafer thinning method and wafer structure
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Application No.: US16584513Application Date: 2019-09-26
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Publication No.: US11227760B2Publication Date: 2022-01-18
- Inventor: Hongsheng Yi
- Applicant: Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- Applicant Address: CN Hubei
- Assignee: Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: CN Hubei
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201910690423.3 20190729
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B24B7/22 ; H01L21/687 ; H01L21/66

Abstract:
A wafer thinning method and a wafer structure are provided. In the wafer thinning method, a to-be-thinned wafer is provided, and the to-be-thinned wafer is grinded on a rear surface of the to-be-thinned wafer. Then, a first planarization process is performed on a rear surface of the grinded wafer to restore surface flatness of the grinded wafer, and a second planarization process is performed on a rear surface of the wafer obtained after the first planarization process is performed until a target thinned thickness is reached.
Public/Granted literature
- US20210035793A1 Wafer Thinning Method and Wafer Structure Public/Granted day:2021-02-04
Information query
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