Invention Grant
- Patent Title: Dual bit memory device with triple gate structure
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Application No.: US16741769Application Date: 2020-01-14
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Publication No.: US11227924B2Publication Date: 2022-01-18
- Inventor: Xinshu Cai , Shyue Seng Tan , Eng Huat Toh
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agent David Cain
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/78 ; H01L27/11521 ; H01L29/788 ; H01L29/66 ; G11C16/26 ; H01L21/28 ; G11C16/04 ; G11C16/10 ; G11C16/14
Abstract:
A memory device is provided. The device comprises a semiconductor fin with a first gate and a second gate disposed over the semiconductor fin. A third gate is positioned over the semiconductor fin and a lower portion of the third gate is disposed between the first and second gates.
Public/Granted literature
- US20210217865A1 DUAL BIT MEMORY DEVICE WITH TRIPLE GATE STRUCTURE Public/Granted day:2021-07-15
Information query
IPC分类:
