Invention Grant
- Patent Title: High electron mobility transistors and methods for fabricating the same
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Application No.: US16017833Application Date: 2018-06-25
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Publication No.: US11227943B2Publication Date: 2022-01-18
- Inventor: Travis J. Anderson , Virginia D. Wheeler , Karl D. Hobart , Francis J. Kub
- Applicant: GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY
- Applicant Address: US VA Arlington
- Assignee: GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY
- Current Assignee: GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY
- Current Assignee Address: US VA Arlington
- Agency: U.S. Naval Research Laboratory
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L29/51 ; H01L29/66 ; H01L21/02 ; H01L21/28 ; H01L29/423 ; H01L29/40 ; H01L23/31 ; H01L29/45
Abstract:
A high electron mobility transistor (HEMT) and method of producing the same are provided. The HEMT includes a barrier layer formed on a GaN layer. The HEMT also includes a ZrO2 gate dielectric layer formed by either a ZTB precursor, a TDMA-Zr precursor, or both. The HEMT may also include a recess in the barrier layer in the gate region of the HEMT. The HEMTs may operate in an enhancement mode.
Public/Granted literature
- US20180374944A1 HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS FOR FABRICATING THE SAME Public/Granted day:2018-12-27
Information query
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