A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.