Invention Grant
- Patent Title: Method of operating semiconductor apparatus and semiconductor apparatus
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Application No.: US17100466Application Date: 2020-11-20
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Publication No.: US11229111B2Publication Date: 2022-01-18
- Inventor: Po-Ming Shih , Chi-Hung Liao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H05G2/00
- IPC: H05G2/00 ; G03F7/20

Abstract:
A method of operating a semiconductor apparatus includes generating, by a droplet generator, a target material droplet; receiving, by a catcher, the target material droplet, wherein the catcher has a first section and a second section, wherein the first section of the catcher is closer to the droplet generator than the second section of the catcher; and heating the second section of the catcher, wherein the first section of the catcher is longer than the second section of the catcher and is free of a heater, and heating the second section of the catcher is performed such that a temperature of the second section of the catcher is higher than a temperature of the first section of the catcher.
Public/Granted literature
- US20210076479A1 METHOD OF OPERATING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS Public/Granted day:2021-03-11
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