A semiconductor package includes a first metal interconnection disposed in a semiconductor chip, a first bump group configured to be connected to the first metal interconnection, a first inner lead pattern group configured to be connected to the first bump group, a second metal interconnection disposed in the semiconductor chip, a second bump group configured to be connected to the second metal interconnection; and a second inner lead pattern group configured to be connected to the second bump group, wherein a density of the first metal interconnection is greater than a density of the second metal interconnection, such that a first pitch of the first lead pattern group is greater than a second pitch of the second lead pattern group.