Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16431778Application Date: 2019-06-05
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Publication No.: US11233055B2Publication Date: 2022-01-25
- Inventor: Kiyoshi Kato
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP2010-152021 20100702
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L27/06 ; H01L27/11521 ; H01L27/11551 ; H01L27/1156 ; H01L27/12 ; H01L27/108 ; G11C16/04 ; G11C16/08 ; G11C16/10 ; G11C16/26

Abstract:
An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limit on the number of write operations. The semiconductor device includes a first memory cell including a first transistor and a second transistor, a second memory cell including a third transistor and a fourth transistor, and a driver circuit. The first transistor and the second transistor overlap at least partly with each other. The third transistor and the fourth transistor overlap at least partly with each other. The second memory cell is provided over the first memory cell. The first transistor includes a first semiconductor material. The second transistor, the third transistor, and the fourth transistor include a second semiconductor material.
Public/Granted literature
- US20190287974A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-09-19
Information query
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