Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the semiconductor device
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Application No.: US16387218Application Date: 2019-04-17
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Publication No.: US11233063B2Publication Date: 2022-01-25
- Inventor: Young Geun Jang , Wan Sup Shin , Ki Hong Lee , Jae Jung Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2018-0117861 20181002
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11565 ; H01L27/11573 ; H01L23/522 ; H01L29/423 ; H01L21/311 ; H01L21/768 ; H01L21/28
Abstract:
A semiconductor device, and method of manufacturing a semiconductor device, includes second conductive patterns separated from each other above a first stack structure which is penetrated by first channel structures and enclosing second channel structures coupled to the first channel structures, respectively. Each of the second conductive patterns includes electrode portions stacked in a first direction and at least one connecting portion extending in the first direction to be coupled to the electrode portions.
Information query
IPC分类:
