Invention Grant
- Patent Title: Array substrate and manufacturing method thereof
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Application No.: US16627784Application Date: 2019-12-20
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Publication No.: US11233074B2Publication Date: 2022-01-25
- Inventor: Zhenguo Lin , Xingyu Zhou , Yuanjun Hsu , Poyen Lu
- Applicant: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicant Address: CN Shenzhen
- Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Priority: CN201911131998.8 20191119
- International Application: PCT/CN2019/126907 WO 20191220
- International Announcement: WO2021/097995 WO 20210527
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/12

Abstract:
The present application provides an array substrate and a manufacturing method thereof. The array substrate includes a thin film transistor and a storage capacitor prepared on a substrate; the thin film transistor includes a gate, an active layer, and a source/drain; the storage capacitor includes a first electrode and a second electrode isolated therefrom by a dielectric layer; the gate is disposed above the first electrode and located at one end of the first electrode; and the second electrode corresponds to a portion of the first electrode non-corresponding to the gate.
Public/Granted literature
- US20210335851A1 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-10-28
Information query
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