An image sensor includes one or more first unit pixels. Each of the one or more first unit pixels may include a first photoelectric conversion region including first photoelectric conversion elements arranged in the form of a matrix, and a first floating diffusion region at a center of the first photoelectric conversion elements; a first transistor region including a first active region in which a first reset gate, a first select gate and a first drive gate are disposed; a first signal interconnect electrically connecting the first floating diffusion region to the first drive gate; and a first shielding interconnect separated from the first signal interconnect and extending parallel to the first signal interconnect.