Invention Grant
- Patent Title: Silicon carbide oxide hard mask for reducing dishing effects
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Application No.: US16937252Application Date: 2020-07-23
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Publication No.: US11233136B2Publication Date: 2022-01-25
- Inventor: Yi-Lun Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L29/66 ; H01L21/311 ; H01L29/06 ; H01L29/49 ; H01L21/768
Abstract:
The present disclosure relates to a semiconductor device that includes a first terminal formed on a fin region and having a first spacer. The semiconductor device further includes a second terminal having a hard mask and a second spacer opposing the first spacer. The hard mask and the second spacer are formed using different materials. The semiconductor device also includes a seal layer formed between first and second spacers of the first and second terminals, respectively. The semiconductor device further includes an air gap surrounded by the seal layer, the fin region, and the first and second spacers.
Public/Granted literature
- US20210193817A1 SILICON CARBIDE OXIDE HARD MASK FOR REDUCING DISHING EFFECTS Public/Granted day:2021-06-24
Information query
IPC分类:
