Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16856842Application Date: 2020-04-23
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Publication No.: US11233140B2Publication Date: 2022-01-25
- Inventor: Chun Hsiung Tsai , Clement Hsingjen Wann , Kuo-Feng Yu , Yi-Tang Lin , Yu-Ming Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762 ; H01L29/66 ; H01L21/8234 ; H01L29/417 ; H01L29/06 ; H01L29/423
Abstract:
In a method of manufacturing a semiconductor device including a field effect transistor (FET), a sacrificial region is formed in a substrate, and a trench is formed in the substrate. A part of the sacrificial region is exposed in the trench. A space is formed by at least partially etching the sacrificial region, an isolation insulating layer is formed in the trench and the space, and a gate structure and a source/drain region are formed. An air spacer is formed in the space under the source/drain region.
Public/Granted literature
- US20200343373A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-10-29
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