Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof, array substrate, and display panel
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Application No.: US16470412Application Date: 2018-12-21
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Publication No.: US11233154B2Publication Date: 2022-01-25
- Inventor: Di Zhang
- Applicant: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing; CN Beijing
- Assignee: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing; CN Beijing
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg
- Priority: CN201810011442.4 20180105
- International Application: PCT/CN2018/122546 WO 20181221
- International Announcement: WO2019/134535 WO 20190711
- Main IPC: H01L21/786
- IPC: H01L21/786 ; H01L29/786 ; H01L27/12 ; H01L29/24 ; H01L29/66 ; H01L21/02 ; H01L21/465 ; H01L21/4763

Abstract:
A thin film transistor, a manufacturing method thereof, an array substrate, and a display panel are provided. The thin film transistor includes a semiconductor layer, a source and a drain. The semiconductor layer includes an active layer and a superhydrophobic layer. The active layer includes a source contact, a drain contact and a channel portion. The source corresponds to the source contact, and the drain corresponds to the drain contact. The superhydrophobic layer is disposed on a surface of the active layer proximal to the source and the drain. The superhydrophobic layer includes a plurality of multi-level nanostructures protruding from the surface of the active layer, and the superhydrophobic layer at least covers a channel portion of the active layer.
Public/Granted literature
- US20210328060A1 Thin Film Transistor and Manufacturing Method Thereof, Array Substrate, and Display Panel Public/Granted day:2021-10-21
Information query
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