There is provided a semiconductor laser including: a first mirror layer; a second mirror layer; an active layer; a current confinement layer; a first region including a plurality of first oxidized layers; and a second region including a plurality of second oxidized layers, in which, in a plan view, the laminated body includes a first part including the first region and the second region, a second part including the first region and the second region, and a third part disposed between the first part and the second part and resonating light generated in the active layer, the third part includes a fourth part including the first region and the second region and having a first groove, a fifth part including the first region and the second region and having a second groove, and a sixth part disposed between the fourth part and the fifth part and sandwiched between the first part and the second part, in a plan view.