- Patent Title: Method for fabricating resonator structure and resonator structure
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Application No.: US15934387Application Date: 2018-03-23
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Publication No.: US11233493B2Publication Date: 2022-01-25
- Inventor: Hans-Joerg Timme , Carsten Ahrens , Ruediger Bauder
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Schiff Hardin LLP
- Priority: DE102017107391.4 20170406
- Main IPC: H03H3/02
- IPC: H03H3/02 ; H03H9/205 ; H03H9/17 ; H01L41/277 ; H03H9/58 ; H03H9/02
Abstract:
Methods for manufacturing resonator structures and corresponding resonator structures are described. A first wafer including a first piezoelectric material is singulated and bonded to a second wafer.
Public/Granted literature
- US20180294790A1 METHOD FOR FABRICATING RESONATOR STRUCTURE AND RESONATOR STRUCTURE Public/Granted day:2018-10-11
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