Invention Grant
- Patent Title: Sputtering target and production method therefor
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Application No.: US16307521Application Date: 2017-06-07
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Publication No.: US11236416B2Publication Date: 2022-02-01
- Inventor: Yasushi Morii , Yoshimasa Koido
- Applicant: JX Nippon Mining & Metals Corporation
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Marshall, Gerstein & Borun LLP
- Priority: JPJP2016-113945 20160607
- International Application: PCT/JP2017/021180 WO 20170607
- International Announcement: WO2017/213185 WO 20171214
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C22C21/00 ; C22F1/04 ; C22C28/00 ; C22F1/16 ; C22F1/00
Abstract:
A sputtering target according to this invention comprises an alloy of Al and Sc and contains from 25 at. % to 50 at. % of Sc. The sputtering target has an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less.
Public/Granted literature
- US20190161851A1 Sputtering Target and Production Method Therefor Public/Granted day:2019-05-30
Information query
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