Invention Grant
- Patent Title: Multilayer stack for the growth of carbon nanotubes by chemical vapor deposition
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Application No.: US16588848Application Date: 2019-09-30
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Publication No.: US11236419B2Publication Date: 2022-02-01
- Inventor: Yoann Dini , Jean Dijon
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Arent Fox LLP
- Priority: FR1859070 20181001
- Main IPC: C23C16/26
- IPC: C23C16/26 ; C23C16/40 ; C23C16/455 ; C01B32/158 ; C01B32/16

Abstract:
The subject of the invention is the use, as catalyst support sublayer in a process for growing carbon nanotubes by chemical vapour deposition (CVD), of a multilayer stack formed of alternating layers of silica and of alumina, each of the layers having a thickness of less than or equal to 10 nm and consisting of one or more superposed atomic monolayer(s). It also relates to a multilayer structure comprising a substrate which has, on at least one of its faces, such a multilayer stack, and also to the use thereof for the growth of a mat of carbon nanotubes, which are in particular spinnable, by chemical vapour deposition, preferably hot-filament chemical vapour deposition.
Information query
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