Invention Grant
- Patent Title: Detection device and manufacturing method thereof
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Application No.: US16534789Application Date: 2019-08-07
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Publication No.: US11237189B2Publication Date: 2022-02-01
- Inventor: Kuo-Tung Chiang , Cheng-Kun Lee , Jin-Rong Guo
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW108111258 20190329
- Main IPC: G01R1/073
- IPC: G01R1/073

Abstract:
A detection device includes: a metal body having a plurality of main vias, a plurality of main through holes with insulators formed on the hole walls of the main vias, and a plurality of connecting elements disposed in the main through holes. Therefore, when testing a chip with I/O pins of high density with the detection device, the connecting elements contact the insulator only, without contacting the hole walls of the main vias, and the problem of short circuits can be avoided. A method of forming a detection device is also provided.
Public/Granted literature
- US20200309820A1 DETECTION DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-10-01
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