Invention Grant
- Patent Title: Memory system performance enhancements using measured signal and noise characteristics of memory cells
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Application No.: US16714463Application Date: 2019-12-13
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Publication No.: US11237726B2Publication Date: 2022-02-01
- Inventor: James Fitzpatrick , Sivagnanam Parthasarathy , Patrick Robert Khayat , AbdelHakim S. Alhussien , Violante Moschiano
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Greenberg Traurig
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C16/26 ; G11C16/04 ; G11C11/56

Abstract:
A memory sub-system configured to improve performance using signal and noise characteristics of memory cells measured during the execution of a command in a memory component. For example, the memory component is enclosed in an integrated circuit and has a calibration circuit. The signal and noise characteristics are measured by the calibration circuit as a byproduct of executing the command in the memory component. A processing device separate from the memory component transmits the command to the memory component, and receives and processes the signal and noise characteristics to identify an attribute about the memory component. Subsequently, an operation related to data stored in the memory component can be performed based on the attribute.
Public/Granted literature
- US20210181942A1 Memory System Performance Enhancements using Measured Signal and Noise Characteristics of Memory Cells Public/Granted day:2021-06-17
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