Invention Grant
- Patent Title: High throughput DRAM with distributed column access
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Application No.: US16543778Application Date: 2019-08-19
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Publication No.: US11237734B2Publication Date: 2022-02-01
- Inventor: Yuan He
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F13/16

Abstract:
An apparatus having memory dies with a memory cell array divided into a plurality of data segments. A stagger circuit selects a common command signal and sets a column access signal to select a data segment to be accessed based on the common command signal and/or an individual command signal to perform a memory operation corresponding to the selected common command signal on the selected data segment. A data bus connects the memory cell arrays to form data units with each data unit including a data segment from each memory cell array and configured such that the data segments are connected in parallel to the data bus and use a same line of the data bus. The stagger circuits are configured such that data segments identified for activation in the plurality of memory dies are not part of a same data unit.
Public/Granted literature
- US20210055867A1 HIGH THROUGHPUT DRAM WITH DISTRIBUTED COLUMN ACCESS Public/Granted day:2021-02-25
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