In some embodiments, the present disclosure relates to an ion beam etching apparatus. The ion beam etching apparatus includes a substrate holder disposed within a processing chamber and a plasma source in communication with the processing chamber. A vacuum pump is coupled to the processing chamber by way of an inlet. One or more baffles are arranged between the substrate holder and a lower surface of the processing chamber. A by-product redistributor is configured to move a by-product from an etching process from outside of the one or more baffles to directly below the one or more baffles.