Invention Grant
- Patent Title: Plasma processing method and plasma processing apparatus
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Application No.: US16521080Application Date: 2019-07-24
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Publication No.: US11239090B2Publication Date: 2022-02-01
- Inventor: Masahiro Tabata , Sho Kumakura
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Weihrouch IP
- Priority: JPJP2018-139450 20180725,JPJP2019-097691 20190524
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02
Abstract:
A plasma processing method executed by a plasma processing apparatus includes steps of an opening formation, a first film formation, a second film formation, and an etching. In the opening formation, the plasma processing apparatus performs etching on a substrate including a base layer and a first layer formed on the base layer so as to form an opening in the first layer. When determined that the opening satisfies a predetermined condition, in the first film formation, the plasma processing apparatus forms an inhibitor on a bottom surface of the opening so as to form a first film to which a predetermined gas species is not adsorbed. After the formation of the first film, the plasma processing apparatus forms a second film on the side wall of the opening in the second film formation. The plasma processing apparatus also performs etching in the opening in the etching.
Public/Granted literature
- US20200035501A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2020-01-30
Information query
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