Invention Grant
- Patent Title: Semiconductor structure and forming method thereof
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Application No.: US16865906Application Date: 2020-05-04
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Publication No.: US11239110B2Publication Date: 2022-02-01
- Inventor: Jiquan Liu
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai; CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai; CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201910385409.2 20190509
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/311 ; H01L23/522 ; H01L23/528
Abstract:
Semiconductor structure and method for forming semiconductor structure are provided. A substrate is provided, including a first dielectric layer, a first conductive layer and a second conductive layer. A first stop layer is formed on a top surface of the first conductive layer and a top surface of the second conductive layer, and a second stop layer is formed on a surface of the first dielectric layer. A second dielectric layer is formed on a surface of the first stop layer and a surface of the second stop layer. A first opening and a second opening are formed in the second dielectric layer by etching a portion of the second dielectric layer until the surface of the first stop layer is exposed. The first opening exposes the first stop layer on the first conductive layer, and the second opening exposes the first stop layer on the second conductive layer.
Information query
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