Invention Grant
- Patent Title: Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices
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Application No.: US16543430Application Date: 2019-08-16
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Publication No.: US11239128B2Publication Date: 2022-02-01
- Inventor: Seng Kim Dalson Ye , Chin Hui Chong , Choon Kuan Lee , Wang Lai Lee , Roslan Bin Said
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Priority: SG200505312-9 20050819
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/498 ; H01L25/00 ; H01L21/56 ; H01L23/00 ; H01L25/10 ; H01L25/11 ; H01L21/58 ; H01L21/60 ; H01L21/98
Abstract:
Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices are described herein. In one embodiment, a set of stacked microelectronic devices includes (a) a first microelectronic die having a first side and a second side opposite the first side, (b) a first substrate attached to the first side of the first microelectronic die and electrically coupled to the first microelectronic die, (c) a second substrate attached to the second side of the first microelectronic die, (d) a plurality of electrical couplers attached to the second substrate, (e) a third substrate coupled to the electrical couplers, and (f) a second microelectronic die attached to the third substrate. The electrical couplers are positioned such that at least some of the electrical couplers are inboard the first microelectronic die.
Information query
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