Invention Grant
- Patent Title: Package structure and method for forming the same
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Application No.: US16656879Application Date: 2019-10-18
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Publication No.: US11239142B2Publication Date: 2022-02-01
- Inventor: Chih-Fan Huang , Hsiang-Ku Shen , Hui-Chi Chen , Tien-I Bao , Dian-Hau Chen , Yen-Ming Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/522 ; H01L23/48

Abstract:
A package structure and method for forming the same are provided. The package structure includes a conductive layer formed over a first substrate, and a dielectric layer formed over the conductive layer. The package structure includes a metal-insulator-metal (MIM) capacitor embedded in the dielectric layer, and a shielding layer formed over the MIM capacitor. The shielding layer is insulated from the MIM capacitor by the dielectric layer. The package structure also includes a first through via formed through the MIM capacitor, and the first through via is connected to the conductive layer, and the first through via is insulated from the shielding layer.
Public/Granted literature
- US20210118782A1 PACKAGE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2021-04-22
Information query
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