Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US16532216Application Date: 2019-08-05
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Publication No.: US11239143B2Publication Date: 2022-02-01
- Inventor: Pei-Haw Tsao , Tsung-Hsing Lu , Li-Huan Chu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H05K1/02 ; H01L21/48

Abstract:
A semiconductor structure includes a first substrate including a first surface and a second surface opposite to the first surface; a first conductive via extended through the first substrate; a second conductive via extended through the first substrate; and a third conductive via extended through the first substrate, wherein the second conductive via is disposed between the first conductive via and the third conductive via, the second conductive via is configured to connect to a signal source, and the first conductive via and the third conductive via are configured to connect to an electrical ground.
Public/Granted literature
- US20200098677A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-03-26
Information query
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