Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15931816Application Date: 2020-05-14
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Publication No.: US11239159B2Publication Date: 2022-02-01
- Inventor: Yasuhiro Murase , Tomoyuki Ashimine , Hiroshi Nakagawa
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Nagaokakyo
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Nagaokakyo
- Agency: Arent Fox LLP
- Priority: JPJP2017-254518 20171228
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L27/02 ; H01L29/94 ; H01L27/06 ; H01L49/02

Abstract:
A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface, a first electrode opposing the first main surface of the semiconductor substrate, a dielectric layer between the semiconductor substrate and the first electrode, a first resistance control layer on the first electrode, a wiring part on the first resistance control layer, and a second electrode opposing the second main surface of the semiconductor substrate. The first resistance control layer includes a first region that has a first electrical resistivity and that electrically connects the first electrode and the wiring part, and a second region that is aligned with the first region and has a second electrical resistivity higher than the first electrical resistivity of the first region.
Public/Granted literature
- US20200273796A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-08-27
Information query
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