Invention Grant
- Patent Title: Semiconductor device with metal plug having rounded top surface
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Application No.: US16801650Application Date: 2020-02-26
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Publication No.: US11239164B2Publication Date: 2022-02-01
- Inventor: Chun-Heng Wu
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/108 ; H01L23/535 ; H01L23/485 ; H01L23/532 ; H01L23/522
Abstract:
A semiconductor device includes a first metal plug and an etch stop layer disposed over a semiconductor substrate. The first metal plug has an upper portion protruding from a top surface of the etch stop layer, and a top surface of the upper portion is rounded. The semiconductor device also includes a second metal plug disposed over the first metal plug. The second metal plug is in direct contact with a first sidewall of the upper portion of the first metal plug and the top surface of the etch stop layer.
Public/Granted literature
- US20210265267A1 SEMICONDUCTOR DEVICE WITH METAL PLUG HAVING ROUNDED TOP SURFACE AND METHOD FOR FORMING THE SAME Public/Granted day:2021-08-26
Information query
IPC分类:
