Invention Grant
- Patent Title: Integrating passive devices in package structures
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Application No.: US16741003Application Date: 2020-01-13
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Publication No.: US11239205B2Publication Date: 2022-02-01
- Inventor: Chih-Chia Hu , Ming-Fa Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L25/03 ; H01L25/18 ; H01L23/552 ; H01L23/538 ; H01L23/00 ; H01L25/00

Abstract:
A method includes bonding a first device die with a second device die. The second device die is over the first device die. A passive device is formed in a combined structure including the first and the second device dies. The passive device includes a first and a second end. A gap-filling material is formed over the first device die, with the gap-filling material including portions on opposite sides of the second device die. The method further includes performing a planarization to reveal the second device die, with a remaining portion of the gap-filling material forming an isolation region, forming a first and a second through-vias penetrating through the isolation region to electrically couple to the first device die, and forming a first and a second electrical connectors electrically coupling to the first end and the second end of the passive device.
Public/Granted literature
- US20200152608A1 Integrating Passive Devices in Package Structures Public/Granted day:2020-05-14
Information query
IPC分类: