Embodiments disclosed herein include a semiconductor device. In an embodiment, the semiconductor device comprises a first transistor strata. The first transistor strata comprises a first backbone, a first transistor adjacent to a first edge of the first backbone, and a second transistor adjacent to a second edge of the first backbone. In an embodiment, the semiconductor device further comprises a second transistor strata over the first transistor strata. The second transistor strata comprises a second backbone, a third transistor adjacent to a first edge of the second backbone, and a fourth transistor adjacent to a second edge of the second backbone.