Invention Grant
- Patent Title: Microelectronic devices including stair step structures, and related electronic devices and methods
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Application No.: US16686830Application Date: 2019-11-18
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Publication No.: US11239248B2Publication Date: 2022-02-01
- Inventor: Lifang Xu , John D. Hopkins , Roger W. Lindsay , Shuangqiang Luo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/11573
- IPC: H01L27/11573 ; H01L23/522 ; H01L23/528 ; H01L23/535 ; H01L27/11529 ; H01L21/768
Abstract:
A method of forming a microelectronic device comprises forming isolated nitride structures on steps of stair step structures comprising stacked tiers comprising alternating levels of a first insulative material and a second insulative material, forming a photoresist material over some of the stair step structures, and replacing the isolated nitride structures and the second insulative material with an electrically conductive material to respectively form conductive pad structures and electrically conductive lines. Related microelectronic devices and electronic devices are also disclosed.
Public/Granted literature
- US20210151455A1 MICROELECTRONIC DEVICES INCLUDING STAIR STEP STRUCTURES, AND RELATED ELECTRONIC DEVICES AND METHODS Public/Granted day:2021-05-20
Information query
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