Example embodiments relate to single-photon avalanche diode detector (SPAD) arrays. One embodiment includes a SPAD array that includes a silicon substrate, a plurality of primary electrodes, and a plurality of secondary electrodes. Each of the primary electrodes includes a semiconductor material of a first doping type, extends in the silicon substrate in a first direction, and has a rotationally symmetric cross-section in a first plane perpendicular to the first direction. The plurality of secondary electrodes includes a semiconductor material of a second doping type and extends parallel to the primary electrodes in the silicon substrate. Further, the silicon substrate includes a doped upper field redistribution layer, a doped lower field redistribution layer, and a doped depletion layer arranged between the upper field redistribution layer and the lower field redistribution layer. A cross-section of each primary electrode is surrounding by one or more cross-sections of at least one neighboring secondary electrode.