Invention Grant
- Patent Title: Back-illuminated semiconductor photodetection element
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Application No.: US17046888Application Date: 2019-04-11
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Publication No.: US11239266B2Publication Date: 2022-02-01
- Inventor: Tomoya Taguchi , Yuki Yoshida , Katsumi Shibayama
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JPJP2018-078651 20180416
- International Application: PCT/JP2019/015844 WO 20190411
- International Announcement: WO2019/203128 WO 20191024
- Main IPC: H01L27/144
- IPC: H01L27/144 ; H01L23/00

Abstract:
A semiconductor substrate includes a first main surface and a second main surface opposing each other. The semiconductor substrate includes a plurality of second semiconductor regions in a side of the second main surface. Each of the second semiconductor regions includes a first region including a textured surface, and a second region where a bump electrode is disposed. An insulating film includes a first insulating film covering surfaces of the second semiconductor regions, and a second insulating film covering peripheries of pad electrodes. The pad electrodes include a first electrode region in contact with the second region, and a second electrode region continuous with the first electrode region. The second electrode region is disposed on at least a part of a region included in the first insulating film and corresponding to the first region. The first main surface is a light incident surface of the semiconductor substrate.
Public/Granted literature
- US20210159255A1 BACK-ILLUMINATED SEMICONDUCTOR PHOTODETECTION ELEMENT Public/Granted day:2021-05-27
Information query
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